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MMH3111NT1 1 rf device data freescale semiconductor MMH3111NT1 250 - 4000 mhz, 12 db 22.5 dbm gaas hfet heterostructure field effect transistor (gaas hfet) broadband high linearity amplifier the MMH3111NT1 is a general purpose amplifier that is internally input and output prematched. it is designed for a broad range of class a, small - signal, high linearity, general pu rpose applications. it is suitable for applications with frequencies from 250 to 4000 mhz such as cellular, pcs, wll, phs, catv, vhf, uhf, umts and general small - signal rf. features ? frequency: 250 to 4000 mhz ? p1db: 22.5 dbm @ 900 mhz ? small - signal gain: 12 db @ 900 mhz ? third order output intercept point: 44 dbm @ 900 mhz ? single 5 volt supply ? internally prematched to 50 ohms ? internally biased ? low cost sot - 89 surface mount package ? rohs compliant ? in tape and reel. t1 suffix = 1,000 units per 12 mm, 7 inch reel. case 1514 - 02, style 2 sot - 89 plastic 1 2 3 table 1. typical performance (1) characteristic symbol 900 mhz 2140 mhz 3500 mhz unit small - signal gain (s21) g p 12 11.3 10 db input return loss (s11) irl -14 -15 -16 db output return loss (s22) orl -14 -19 -14 db power output @1db compression p1db 22.5 22 22 dbm third order output intercept point ip3 44 44 42 dbm 1. v dd = 5 vdc, t c = 25 c, 50 ohm system table 2. maximum ratings rating symbol value unit supply voltage (2) v dd 6 v supply current (2) i dd 300 ma rf input power p in 10 dbm storage temperature range t stg - 65 to +150 c junction temperature (3) t j 150 c 2. continuous voltage and current applied to device. 3. for reliable operation, the junction temperature should not exceed 150 c. table 3. thermal characteristics (v dd = 5 vdc, i dd = 150 ma, t c = 25 c) characteristic symbol value (4) unit thermal resistance, junction to case r jc 37.5 c/w 4. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: MMH3111NT1 rev. 0, 11/2007 freescale semiconductor technical data ? freescale semiconductor, inc., 2007. all rights reserved.
2 rf device data freescale semiconductor MMH3111NT1 table 4. electrical characteristics (v dd = 5 vdc, 900 mhz, t c = 25 c, 50 ohm system, in freescale application circuit) characteristic symbol min typ max unit small - signal gain (s21) g p 11 12 ? db input return loss (s11) irl ? -14 ? db output return loss (s22) orl ? -14 ? db power output @ 1db compression p1db ? 22.5 ? dbm third order output intercept point ip3 ? 44 ? dbm noise figure nf ? 3.2 ? db supply current (1) i dd 120 150 190 ma supply voltage (1) v dd ? 5 ? v 1. for reliable operation, the junction temperature should not exceed 150 c.
MMH3111NT1 3 rf device data freescale semiconductor table 5. functional pin description pin number pin function 1 rf in 2 ground 3 rf out /dc supply table 6. esd protection characteristics test methodology class human body model (per jesd 22 - a114) 1a (minimum) machine model (per eia/jesd 22 - a115) a (minimum) charge device model (per jesd 22 - c101) iv (minimum) table 7. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 1 260 c figure 1. functional diagram 3 2 1 2
4 rf device data freescale semiconductor MMH3111NT1 50 ohm typical characteristics 5 20 0 t c = 85 c f, frequency (ghz) figure 2. small - signal gain (s21) versus frequency 15 123 g p , small?signal gain (db) ?40 c 0 0 s22 f, frequency (ghz) figure 3. input/output loss versus frequency v dd = 5 vdc i dd = 150 ma ?20 123 s11, s22 (db) 24 8 13 10 p out , output power (dbm) figure 4. small - signal gain versus output power v dd = 5 vdc i dd = 150 ma 12 11 10 9 12 14 3.5 3 2.5 2 1.5 1 0.5 16 24 23 21 19 v dd = 5 vdc i dd = 150 ma f, frequency (ghz) figure 5. p1db versus frequency p1db, 1 db compression point (dbm) 22 20 6 0 160 0 v dd , drain voltage (v) figure 6. drain current versus drain voltage 140 100 20 15 i dd , drain current (ma) 60 234 4 36 50 0 f, frequency (ghz) figure 7. third order output intercept point versus frequency 48 46 44 42 123 v dd = 5 vdc, i dd = 150 ma, 10 dbm per tone two?tone measurements, 1 mhz tone spacing ip3, third order output intercept point (dbm) 18 16 g p , small?signal gain (db) v dd = 5 vdc 900 mhz 2140 mhz 1960 mhz 2600 mhz 3500 mhz 120 80 40 ?10 s11 4 20 18 17 40 10 4 25 c ?30 ?40 22 38
MMH3111NT1 5 rf device data freescale semiconductor 50 ohm typical characteristics 35 47 4 v dd , drain voltage (v) figure 8. third order output intercept point versus drain voltage 45 43 41 39 ip3, third order output intercept point (dbm) 4.2 4.4 5 4.6 100 ?40 ?20 0 20 40 60 80 43 48 t, temperature ( c) figure 9. third order output intercept point versus case temperature 46 45 44 ip3, third order output intercept point (dbm) figure 10. third order intermodulation versus output power p out , output power (dbm) imd, third order intermodulation distortion (dbc) 10 12 14 ?70 ?25 ?55 ?65 v dd = 5 vdc i dd = 150 ma f = 900 mhz 1 mhz tone spacing ?45 150 10 4 10 6 120 figure 11. mttf versus junction temperature 10 5 125 130 135 140 145 t j , junction temperature ( c) note: the mttf is calculated with v dd = 5 vdc, i dd = 150 ma mttf (years) 4 0 8 0 f, frequency (ghz) figure 12. noise figure versus frequency v dd = 5 vdc i dd = 150 ma 6 4 2 123 nf, noise figure (db) ?70 ?30 10 p out , output power (dbm) figure 13. single - carrier w - cdma adjacent channel power ratio versus output power ?40 ?50 ?60 16 14 12 acpr, adjacent channel power ratio (db) 19 47 v dd = 5 vdc, f = 900 mhz, 10 dbm per tone two?tone measurements, 1 mhz tone spacing 18 ?35 11 918 37 4.8 ?30 ?40 ?50 ?60 16 13 15 17 v dd = 5 vdc, i dd = 150 ma, f = 2140 mhz single?carrier w?cdma, 3.84 mhz channel bandwidth, input signal par = 8.5 db @ 0.01% probability (ccdf) f = 900 mhz, 10 dbm per tone two?tone measurements, 1 mhz tone spacing
6 rf device data freescale semiconductor MMH3111NT1 50 ohm application circuit: 800- 1900 mhz figure 14. 50 ohm test circuit schematic figure 15. s21, s11 and s22 versus frequency ?40 600 f, frequency (mhz) v dd = 5 vdc i dd = 150 ma 800 1000 20 10 0 ?10 ?20 ?30 s21, s11, s22 (db) s21 s11 rf output rf input v supply c3 z1 z2 c1 c2 r1 l1 v cc dut figure 16. 50 ohm test circuit component layout z1 0.347 x 0.058 microstrip z2 0.068 x 0.058 microstrip z3 0.418 x 0.058 microstrip z4 0.089 x 0.058 microstrip z5 0.172 x 0.058 microstrip z6 0.403 x 0.058 microstrip z7 0.086 x 0.058 microstrip z8 0.261 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r = 4.1 z8 c6 z7 z6 c4 z5 z4 l2 z3 c5 1200 1400 1600 1800 2000 s22 mmg30xx rev 2 c1 c5 l2 r1 c4 c3 l1 c2 c6 table 8. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 47 pf chip capacitors 06035j470bbstr avx c3 0.1 f chip capacitor c0603c104j5rac kemet c4 1 f chip capacitor c0603c105j5rac kemet c5 0.7 pf chip capacitor 06035j0r7bbstr avx c6 0.4 pf chip capacitor 12105j0r4bbttr avx l1 56 nh chip inductor hk160856nj - t taiyo yuden l2 12 nh chip inductor hk160812nj - t taiyo yuden r1 0 , 1/10 w chip resistor crcw06030000fkea vishay
MMH3111NT1 7 rf device data freescale semiconductor 50 ohm application circuit: 1900- 2200 mhz figure 17. 50 ohm test circuit schematic figure 18. s21, s11 and s22 versus frequency ?30 f, frequency (mhz) v dd = 5 vdc i dd = 150 ma 1800 20 10 0 ?10 ?20 s21, s11, s22 (db) s21 s11 rf output rf input v supply c3 z1 z2 c1 c2 r1 l1 v cc dut figure 19. 50 ohm test circuit component layout z1 0.347 x 0.058 microstrip z2 0.068 x 0.058 microstrip z3 0.507 x 0.058 microstrip z4 0.172 x 0.058 microstrip z5 0.403 x 0.058 microstrip z6 0.086 x 0.058 microstrip z7 0.261 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r = 4.1 z7 c6 z6 z5 c4 z4 z3 c5 1900 2000 2100 2200 2300 s22 mmg30xx rev 2 c1 c5 r1 c4 c3 l1 c2 c6 table 9. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 47 pf chip capacitors 06035j470bbstr avx c3 0.1 f chip capacitor c0603c104j5rac kemet c4 1 f chip capacitor c0603c105j5rac kemet c5 0.7 pf chip capacitor 06035j0r7bbstr avx c6 0.4 pf chip capacitor 12105j0r4bbttr avx l1 56 nh chip inductor hk160856nj - t taiyo yuden r1 0 , 1/10 w chip resistor crcw06030000fkea vishay
8 rf device data freescale semiconductor MMH3111NT1 50 ohm application circuit: 2500 - 3800 mhz figure 20. 50 ohm test circuit schematic figure 21. s21, s11 and s22 versus frequency ?50 f, frequency (mhz) v dd = 5 vdc i dd = 150 ma 2400 20 10 0 ?30 ?40 s21, s11, s22 (db) s21 s11 rf output rf input v supply c3 z1 z2 c1 c2 r1 l1 v cc dut figure 22. 50 ohm test circuit component layout z1 0.347 x 0.058 microstrip z2 0.489 x 0.058 microstrip z3 0.086 x 0.058 microstrip z4 0.097 x 0.058 microstrip z5 0.075 x 0.058 microstrip z6 0.403 x 0.058 microstrip z7 0.347 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r = 4.1 z7 c6 z6 z5 c4 z4 z3 c5 2700 3000 3300 3600 3900 s22 mmg30xx rev 2 c1 c5 r1 c4 c3 l1 c2 c6 ?20 ?10 table 10. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 2 pf chip capacitors 06035j2r0bbstr avx c3 0.1 f chip capacitor c0603c104j5rac kemet c4 1 f chip capacitor c0603c105j5rac kemet c5 0.8 pf chip capacitor 06035j0r8bbstr avx c6 0.4 pf chip capacitor 06035j0r4bbstr avx l1 56 nh chip inductor hk160856nj - t taiyo yuden r1 0 , 1/10 w chip resistor crcw06030000fkea vishay
MMH3111NT1 9 rf device data freescale semiconductor 50 ohm typical characteristics table 11. common source s - parameters (v dd = 5 vdc, i dd = 150 ma, t c = 25 c, 50 ohm system) f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 100 0.329 - 36.383 4.365 165.300 0.116 4.544 0.161 - 47.926 150 0.324 - 37.554 4.337 163.880 0.116 3.571 0.154 - 47.482 250 0.322 - 38.791 4.313 162.387 0.116 2.612 0.147 - 46.993 300 0.318 - 40.072 4.288 160.990 0.116 1.903 0.143 - 46.565 350 0.315 - 41.580 4.266 159.673 0.116 1.012 0.137 - 46.090 400 0.313 - 43.457 4.239 158.172 0.116 0.371 0.133 - 45.522 450 0.313 - 45.793 4.217 156.531 0.116 - 1.047 0.130 - 45.093 500 0.315 - 48.163 4.196 154.804 0.116 - 2.355 0.129 - 44.795 550 0.317 - 50.730 4.175 153.014 0.117 - 3.521 0.129 - 45.225 600 0.319 - 53.308 4.154 151.195 0.117 - 4.643 0.129 - 45.763 650 0.322 - 55.918 4.136 149.346 0.117 - 5.686 0.129 - 46.206 700 0.325 - 58.706 4.116 147.439 0.117 - 6.700 0.129 - 46.966 750 0.329 - 61.512 4.098 145.565 0.117 - 7.693 0.130 - 47.749 800 0.332 - 64.233 4.078 143.660 0.117 - 8.616 0.131 - 48.671 850 0.336 - 67.096 4.059 141.719 0.117 - 9.581 0.132 - 49.880 900 0.339 - 69.960 4.040 139.799 0.117 - 10.489 0.132 - 51.046 950 0.344 - 72.823 4.019 137.852 0.117 - 11.398 0.133 - 52.269 1000 0.347 - 75.724 4.001 135.896 0.117 - 12.312 0.133 - 53.492 1050 0.351 - 78.553 3.983 133.947 0.118 - 13.198 0.133 - 54.989 1100 0.355 - 81.424 3.964 131.996 0.118 - 14.093 0.132 - 56.508 1150 0.358 - 84.459 3.944 130.038 0.118 - 14.998 0.131 - 57.950 1200 0.362 - 87.372 3.924 128.069 0.118 - 15.903 0.131 - 59.716 1250 0.367 - 90.300 3.903 126.129 0.118 - 16.821 0.129 - 61.319 1300 0.371 - 93.201 3.883 124.163 0.118 - 17.713 0.128 - 63.068 1350 0.375 - 96.015 3.861 122.219 0.118 - 18.623 0.126 - 64.878 1400 0.380 - 98.765 3.837 120.287 0.118 - 19.497 0.124 - 66.432 1450 0.385 - 101.218 3.815 118.370 0.118 - 20.349 0.123 - 67.493 1500 0.391 - 103.291 3.793 116.530 0.118 - 21.202 0.123 - 68.218 1550 0.395 - 105.591 3.773 114.664 0.119 - 22.024 0.123 - 69.287 1600 0.398 - 108.116 3.752 112.769 0.119 - 22.896 0.122 - 70.746 1650 0.401 - 110.631 3.731 110.886 0.119 - 23.793 0.121 - 72.539 1700 0.404 - 113.324 3.710 108.972 0.119 - 24.719 0.120 - 74.765 1750 0.407 - 116.074 3.691 107.070 0.119 - 25.638 0.118 - 77.175 1800 0.410 - 118.856 3.672 105.143 0.119 - 26.594 0.117 - 79.613 1850 0.413 - 121.692 3.654 103.215 0.119 - 27.518 0.115 - 82.165 1900 0.416 - 124.469 3.633 101.291 0.119 - 28.483 0.113 - 84.722 1950 0.419 - 127.201 3.613 99.367 0.120 - 29.461 0.111 - 87.462 2000 0.422 - 130.044 3.592 97.431 0.120 - 30.414 0.110 - 90.359 2050 0.425 - 132.901 3.570 95.510 0.120 - 31.362 0.108 - 93.223 2100 0.428 - 135.666 3.547 93.588 0.120 - 32.353 0.106 - 96.005 2150 0.432 - 138.396 3.525 91.656 0.120 - 33.317 0.104 - 99.124 2160 0.433 - 138.893 3.519 91.287 0.120 - 33.518 0.104 - 99.644 2170 0.434 - 139.420 3.515 90.904 0.120 - 33.707 0.103 - 100.212 2180 0.434 - 139.934 3.509 90.532 0.120 - 33.908 0.103 - 100.854 2190 0.435 - 140.473 3.506 90.142 0.120 - 34.094 0.103 - 101.491
10 rf device data freescale semiconductor MMH3111NT1 table 11. common source s - parameters (v dd = 5 vdc, i dd = 150 ma, t c = 25 c, 50 ohm system) (continued) f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 2200 0.436 - 141.015 3.502 89.764 0.120 - 34.293 0.102 - 102.102 2250 0.440 - 143.664 3.480 87.853 0.120 - 35.279 0.100 - 105.319 2300 0.444 - 146.130 3.456 85.964 0.120 - 36.278 0.099 - 108.673 2350 0.448 - 148.573 3.433 84.098 0.120 - 37.227 0.097 - 111.868 2400 0.452 - 150.891 3.408 82.262 0.120 - 38.193 0.094 - 115.093 2450 0.457 - 153.231 3.384 80.399 0.120 - 39.165 0.093 - 118.343 2500 0.461 - 155.588 3.360 78.562 0.120 - 40.131 0.091 - 121.666 2550 0.465 - 157.929 3.337 76.708 0.120 - 41.119 0.090 - 125.028 2600 0.469 - 160.182 3.312 74.886 0.120 - 42.109 0.089 - 128.277 2650 0.473 - 162.557 3.290 73.042 0.120 - 43.087 0.088 - 131.582 2700 0.476 - 164.863 3.268 71.221 0.120 - 44.100 0.088 - 134.657 2750 0.480 - 167.206 3.246 69.393 0.120 - 45.119 0.087 - 137.722 2800 0.483 - 169.520 3.223 67.572 0.120 - 46.143 0.087 - 140.631 2850 0.487 - 171.820 3.201 65.747 0.120 - 47.132 0.086 - 143.444 2900 0.490 - 173.992 3.180 63.945 0.120 - 48.134 0.086 - 146.347 2950 0.494 - 176.195 3.157 62.155 0.120 - 49.132 0.085 - 149.433 3000 0.498 - 178.278 3.136 60.357 0.120 - 50.131 0.085 - 152.745 3050 0.501 179.789 3.114 58.599 0.120 - 51.092 0.085 - 156.274 3100 0.505 177.950 3.092 56.836 0.120 - 52.074 0.084 - 160.030 3150 0.508 176.155 3.071 55.112 0.120 - 53.076 0.085 - 163.912 3200 0.511 174.401 3.051 53.377 0.120 - 54.062 0.085 - 167.662 3250 0.514 172.667 3.031 51.656 0.120 - 55.020 0.085 - 171.336 3300 0.517 170.842 3.010 49.907 0.120 - 55.996 0.086 - 175.010 3350 0.519 169.000 2.990 48.184 0.120 - 56.970 0.087 - 178.505 3400 0.522 167.181 2.970 46.458 0.120 - 57.975 0.087 177.850 3450 0.524 165.308 2.950 44.716 0.120 - 59.010 0.089 174.447 3500 0.527 163.438 2.930 43.003 0.120 - 60.024 0.090 170.925 3550 0.528 161.590 2.911 41.291 0.120 - 61.051 0.093 167.846 3600 0.531 159.691 2.892 39.560 0.120 - 62.060 0.095 164.966
MMH3111NT1 11 rf device data freescale semiconductor 1.7 5.33 3.48 0.58 1.27 0.86 3.86 0.64 7.62 2.49 2.54 1.27 0.305 diameter figure 23. recommended mounting configuration notes: 1. thermal and rf grounding considerations should be used in pcb layout design. 2. depending on pcb design rules, as many vias as possible should be placed on the landing pattern. 3. if vias cannot be placed on the landing pattern, then as many vias as possible should be placed as close to the landing pattern as possible for optimal thermal and rf performance. 4. recommended via pattern shown has 0.381 x 0.762 mm pitch. recommended solder stencil
12 rf device data freescale semiconductor MMH3111NT1 package dimensions
MMH3111NT1 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor MMH3111NT1
MMH3111NT1 15 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers revision history the following table summarizes revisions to this document. revision date description 0 nov. 2007 ? initial release of data sheet
16 rf device data freescale semiconductor MMH3111NT1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MMH3111NT1 rev. 0, 11/2007

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